BROLIS

Class [009]
Semi-conductors based on arsenide and antimony, mixed v group four and five element alloys; semiconductors including superlattice structures, hemt (high electron mobility transistors) structures; infrared wave semiconductor lasers; long-wave infrared spectral band lasers with a radial waveguide gasb (based on gallium and antimony), surface-emitting lasers (vcsels), namely, laser diodes; infrared lasers; thermo-photovoltaic cells; quantum wells (pits) infrared photodetectors; second type superlattice detectors; photodiodes; avalance photodiodes, p-i-n photodiodes, quantum cascade lasers; terahertz quantum cascade lasers; schottky diodes; holo sensors; heterostructural bipolar transistors; high electron beam field transistors (hemts); high-frequency high electronic mobility field transistors; resonant tunnel diodes; laser scalpels, other than for medical use; laser speed detectors; lasers for industrial use, namely, lasers for surveying, lasers for use in industrial drilling, lasers for use in industrial cutting applications, lasers for use in industrial welding applications; laser measuring tapes; lasers for scientific use, namely, high intensity pulse lasers for nuclear fusion, lasers for lunar ranging, lasers for photochemistry; lasers for military use, namely, lasers for use in firearm sights, military lasers for targeting and infrared illumination, military lasers for directed energy weapons, military lasers for directed infrared countermeasures, military lasers for guiding missiles, military low power infrared lasers, rescue laser signaling flares, laser rangefinders, lasers for surveying; optical semiconductor amplifiers; semiconductors; semiconductor chips